Mex, here is a good device to start with, probably 2 in parallel.
N-Channel Enhancement MOSFETThe voltage gate-source (Vgs) controls the current in the drain-source (Ids). In an N-Channel Enhancement FET, the more positive the Vgs goes the more Ids will flow.
If the Vgs drive is not high enough for a desired Ids, the device will act as a constant current series load and will limit current through Ids. So typically Vgs is over driven (made greater) so a much higher current is able to flow when used as a switch.
The drive circuit for Vgs may be a little bit of a challenge depending how you connect everything.
Let me know how things progress and I will help where I can.
Ken
EDIT: Mex, PM me your e-mail address and I will send you some educational files on FET's.
High side switching primer...App Note
